sot23 pnp silicon planar high voltage transistor issue 3 - october 1995 complementary type fmmt497 partmarking detail - 597 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5 v peak pulse current i cm -1 a continuous collector current i c -0.2 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -300 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -300 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-250v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter cut-off current i ces -100 na v ces =-250v emitter saturation voltages v ce(sat) -0.25 -0.25 v v i c =-50ma, i b =-5ma i c =-100ma, i b =-20ma* v be(sat) -1.0 v i c =-100ma, i b =-20ma* base-emitter turn-on voltage v be(on) -0.85 v i c =-100ma,v ce =-10v* static forward current transfer ratio h fe 100 100 100 300 i c =-1ma, v ce =-10v i c =-50ma,v ce =-10v* i c =-100ma,v ce =-10v* transition frequency f t 75 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT597 c b e 3 - 145 FMMT597 3 - 146 i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 0.9 1a h fe v ic i c -collector current 1ma 100ma 10ma 1a 80 0 240 160 320 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 0.6 0.8 0.9 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma 0.2 0.3 0.4 1a 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1 1ma 0.01 0.4 0.6 1a 10ma 100ma 1ma v ce(sat) v i c i c -collector current 0.4 0 0.1 0.5 0.3 0.2 0.6 1000 0.001 +25c i c /i b =10 i c /i b =50 -55 c +100 c +25 c v ce =10v +100 c +25 c -55 c i c /i b =10 -55 c +25 c +100 c dc 100ms 1s 10ms 1ms 100 m s v ce =10v -55 c +25 c +100 c i c /i b =10 typical characteristics
sot23 pnp silicon planar high voltage transistor issue 3 - october 1995 complementary type fmmt497 partmarking detail - 597 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5 v peak pulse current i cm -1 a continuous collector current i c -0.2 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -300 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -300 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-250v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter cut-off current i ces -100 na v ces =-250v emitter saturation voltages v ce(sat) -0.25 -0.25 v v i c =-50ma, i b =-5ma i c =-100ma, i b =-20ma* v be(sat) -1.0 v i c =-100ma, i b =-20ma* base-emitter turn-on voltage v be(on) -0.85 v i c =-100ma,v ce =-10v* static forward current transfer ratio h fe 100 100 100 300 i c =-1ma, v ce =-10v i c =-50ma,v ce =-10v* i c =-100ma,v ce =-10v* transition frequency f t 75 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT597 c b e 3 - 145 FMMT597 3 - 146 i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 0.9 1a h fe v ic i c -collector current 1ma 100ma 10ma 1a 80 0 240 160 320 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 0.6 0.8 0.9 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma 0.2 0.3 0.4 1a 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1 1ma 0.01 0.4 0.6 1a 10ma 100ma 1ma v ce(sat) v i c i c -collector current 0.4 0 0.1 0.5 0.3 0.2 0.6 1000 0.001 +25c i c /i b =10 i c /i b =50 -55 c +100 c +25 c v ce =10v +100 c +25 c -55 c i c /i b =10 -55 c +25 c +100 c dc 100ms 1s 10ms 1ms 100 m s v ce =10v -55 c +25 c +100 c i c /i b =10 typical characteristics
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